ANALYSIS AND DESIGNOF ANALOG INTEGRATEDCIRCUITS Fourth EditionPAUL R.
GRAYUniversity of California, BerkeleyPAUL J. HURSTUniversity of
California, DavisSTEPHEN H. LEWISUniversity of California, DavisROBERT
G. MEYERUniversity of California, viii Preface as in the teaching of courses on this subject, and this
experience is reflected in the choice of text material and in the
problem sets. Although this book is concerned largely with the analysis
and design of ICs, a consid- erable amount of material is also included
on applications. In practice, these two subjects are closely linked, and
a knowledge of both is essential for designers and users of ICs. The
latter compose the larger group by far, and we believe that a working
knowledge of IC design is a great advantage to an IC user. This is
particularly apparent when the user mdst choose from among a number of
competing designs to satisfy a particular need. An understanding of the
IC structure is then useful in evaluating the relative desirability of
the different designs under extremes of environment or in the presence
of variations in supply voltage. In addition, the IC user is in a much
better position to interpret a manufacturers data if he or she has a
working knowledge of the internal operation of the integrated circuit.
The contents of this book stem largely from courses on analog integrated
circuits given at the University of California at the Berkeley and
Davis campuses. The courses are un- dergraduate electives and first-year
graduate courses. The book is structured so that it can be used as the
basic text for a sequence of such courses. The more advanced mate- rial
is found at the end of each chapter or in an appendix so that a first
course in analog integrated circuits can omit this material without loss
of continuity.
An outline of each chapter is given below together with suggestions for material to be covered in such a first course. It is assumed that the course consists of three hours of lecture per week over a 15-week semester and that the students have a working knowledge of Laplace transforms and frequency-domain circuit analysis. It is also assumed that the students have had an introductory course in electronics so that they are familiar with the principles of transistor operation and with the functioning of simple analog circuits. Unless otherwise stated, each chapter requires three to four lecture hours to cover. Chapter 1 contains a summary of bipolar transistor and MOS transistor device physics. We suggest spending one week on selected topics from this chapter, the choice of topics depending on the background of the students. The material of Chapters 1 and 2 is quite important in IC design because there is significant interaction between circuit and device design, as will be seen in later chapters. A thorough understanding of the influence of device fabrication on device characteristics is essential. Chapter 2 is concerned with the technology of IC fabrication and is largely descriptive. One lecture on this material should suffice if the students are assigned to read the chapter. Chapter 3 deals with the characteristics of elementary transistor connections. The ma- terial on one-transistor amplifiers should be a review for students at the senior and gradu- ate levels and can be assigned as reading. The section on two-transistor amplifiers can be covered in about three hours, with greatest emphasis on differential pairs. The material on device mismatch effects in differential amplifiers can be covered to the extent that time allows.
An outline of each chapter is given below together with suggestions for material to be covered in such a first course. It is assumed that the course consists of three hours of lecture per week over a 15-week semester and that the students have a working knowledge of Laplace transforms and frequency-domain circuit analysis. It is also assumed that the students have had an introductory course in electronics so that they are familiar with the principles of transistor operation and with the functioning of simple analog circuits. Unless otherwise stated, each chapter requires three to four lecture hours to cover. Chapter 1 contains a summary of bipolar transistor and MOS transistor device physics. We suggest spending one week on selected topics from this chapter, the choice of topics depending on the background of the students. The material of Chapters 1 and 2 is quite important in IC design because there is significant interaction between circuit and device design, as will be seen in later chapters. A thorough understanding of the influence of device fabrication on device characteristics is essential. Chapter 2 is concerned with the technology of IC fabrication and is largely descriptive. One lecture on this material should suffice if the students are assigned to read the chapter. Chapter 3 deals with the characteristics of elementary transistor connections. The ma- terial on one-transistor amplifiers should be a review for students at the senior and gradu- ate levels and can be assigned as reading. The section on two-transistor amplifiers can be covered in about three hours, with greatest emphasis on differential pairs. The material on device mismatch effects in differential amplifiers can be covered to the extent that time allows.



No comments:
Post a Comment